A. Tersigni, X. R. Qin, C. -Y. Kim, R. A. Gordon and D. T. Jiang, Reciprocal-space mapping of lateral single-crystal domains with GIXD for tetracene on H/Si(001), Phys. Rev. B 84, 035303 (2011).

J. Shi and X. R. Qin, Nucleation and growth of tetracene films on silicon oxide, Phys. Rev. B 78, 115412 (2008) (6 pages). Time cited: 5

X. R. Qin, A. Tersigni, J. Shi, and D. T. Jiang, Structure and morphology of tetracene thin films on H/Si(001), MRS F06 meeting Symposium S Proceedings (2007).

A. Tersigni, J. Shi, D. T. Jiang and X. R. Qin, Structure of tetracene films on hydrogen-passivated Si(001) studied via STM, AFM, and NEXAFS, Phys. Rev. B 74, 205326 (2006) (9 pages). Time cited: 19

J. Shi and X. R. Qin, Flux dependence of the morphology of a tetracene film on hydrogen-passivated Si(100), Phys. Rev. B (Rapid Communication) 73, 121303 (2006). Time cited: 11

J. Shi and X. R. Qin, Formation of glass fiber tips for scanning near-field optical microscopy by sealed- and open-tube etching, Rev. Sci. Instrum. 76, 013702 (2005) (5 pages).Time cited: 4

Z. Y. Lu, F. Liu, C. Z. Wang, X. R. Qin, B. S. Swartzentruber, M. G. Lagally and K. M. Ho, Unique dynamic appearance of a Ge-Si ad-dimer on Si(001), Phys. Rev. Lett. 85, 5603-5606 (2000).Time cited: 22

X.R. Qin, B.S. Swartzentruber and M.G. Lagally, Diffusional kinetics of SiGe dimers on Si(100) using atom-tracking scanning tunneling microscopy, Phys. Rev. Lett. 85, 3660-3663 (2000).Time cited: 51

X.R. Qin, B.S. Swartzentruber and M.G. Lagally, Atomic-scale identification of Ge/Si intermixing on Si(100)-2x1 at submonolayer Ge coverages, Phys. Rev. Lett. 84, 4546-4549 (2000).Time cited: 47

S. Liu, C. S. Jayanthi, S. Y. Wu, X. R. Qin, Z. Zhang and M. G. Lagally, Formation of chain and V-shaped structures in the initial stage growth of Si/Si(100), Phys. Rev. B. 61, 4421-4424 (2000).Time cited: 12

X.R. Qin and M.G. Lagally,  View of the empty states of the Si(100)-2x1 surface via scanning tunneling microscopy imaging at very low biases, Phys. Rev. B 59, 7293-7296 (1999).Time cited: 34

X.R. Qin, F. Liu, B.S. Swartzentruber and M.G. Lagally, Modification of Si(100) substrate bonding by adsorbed Ge or Si dimer islands, Phys. Rev. Lett. 81, 2288-2291 (1998).Time cited: 17

X. R. Qin, Z. H. Lu, J. G. Shapter, L. L. Coatsworth, K. Griffiths and P. R. Norton, Surface morphology of ex-situ sulphur-passivated (1x1) and (2x1) InP(100) surfaces, J. Vac. Sci. Technol. A 16, 163-168 (1998).Time cited: 10

X.R. Qin and M.G. Lagally,   Adatom Pairing Structures for Ge on Si(100): The Initial Stage of Island Formation, Science 278,1444-1447 (1997).Time cited: 49

X. R. Qin and P. R. Norton, Scanning tunneling microscopy of the phase transition between H/Si(100)-(2x1) and H/Si(100)-(3x1), Phys. Rev. B 53, 11100-11107 (1996).Time cited: 29

G. W. Anderson, M. C. Hanf, X. R. Qin, P. R. Norton, K. Myrtle and B. Heinrich, Epitaxial growth of Fe on sulfur-passivated GaAs(100): a method for preventing As interdiffusion, Surf. Sci. 346, 145(1996).Time cited: 20

X. R. Qin, D. Yang, R. F. Frindt and J. C. Irwin, Scanning tunneling microscopy of single-layer MoS2 in water and butanol, Ultramicroscopy 42-44, 630-636 (1992).Time cited: 14

X. R. Qin, D. Yang, R. F. Frindt and J. C. Irwin, Real-space imaging of single layer MoS2 by scanning tunneling microscopy, Phys. Rev. B (Rapid Communication) 44, 3490-3493 (1991).Time cited: 25

X. R. Qin and G. Kirczenow, Theory of scanning tunnelling microscopy images of intercalated graphite surfaces, Phys. Rev. B 41, 4976-4985 (1990).Time cited: 10

X. R. Qin and G. Kirczenow, Scanning tunneling microscopy and structural properties of intercalated graphite surfaces, Phys. Rev. B (Rapid Communication) 39, 6245-6248 (1989). Time cited: 17

X. R. Qin, Y. Gao and H. Zhen, Mode-locking of semiconductor lasers with an external cavity, Applied Laser Physics, Vol. 6, 250 (1987).

Y. Liao, A. Pen, M. Lee and X. R. Qin, An analytical method for measuring birefringence properties of optical single-mode fibers, ACTA OPTICA SINICA, Vol. 4, 1062 (1984).