Xiaorong Qin

Dr. Xiaorong Qin
Associate Professor and Associate Graduate Coordinator
Email: 
xqin@uoguelph.ca
Phone number: 
519-824-4120 x53675
Office: 
MacN 449
Summary: 

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Ph.D. (1992), Physics, Simon Fraser University, Canada
B.Sc. (1983) & M.Sc. (1986), Electronic Engineering, Tsinghua University (Beijing), China

  • Associate Professor (2007-), Physics, University of Guelph
  • Assistant Professor (2000-2006), Physics, University of Guelph
  • Research Associate (1995-2000), Materials Science and Engineering, University of Wisconsin - Madison
  • NSERC Postdoctoral Fellow (1993-1995), Chemistry, University of Western Ontario

I am a reviewer for numerous international journals and NSERC grant applications. I have been coordinating the CAP lectures and exams at Guelph since 2003. I am a member of APS (American Physical Society), MRS (Material Research Society), AVS (American Vacuum Society) and CAP (Canadian Association of Physicists). 

I am a recipient of NSERC University Faculty Award in 2000-2005.

Driven by the present trend of device miniaturization and emerging opportunities of molecular electronics, high-precision measurement and atomic-scale manipulation of materials are increasingly required. Because when the device dimensions decrease to the point where a single molecular layer may represent a significant percentage of the device scales, surface and interface effects (surface stress and relaxation, morphological and structural irregularities, concentration of unsaturated bonds, and atomic-intermixing, etc.) can significantly influence device properties, understanding surface reactions and the ordering of atoms or molecules are thus highly desirable. The research of my group is centered on using scanning tunnelling microscopy/spectroscopy (STM/STS), atomic force microscopy (AFM), and scanning near-field optical microscopy (SNOM) to characterize structural, electronic and optical properties of surfaces and interfaces at atomic / molecular / nanometer scale. We also use other experimental techniques including ultrahigh vacuum, surface science, and synchrotron radiation. The research activities mainly cover two areas:

  1. To study the structural properties of vacuum vapour-deposited thin films of organic small molecules (polyaromatic hydrocarbons), such as tetracene, on silicon-based substrates or passivated silicon surfaces. The aim is to achieve a molecular-level understanding of the interface formation mechanisms (at a few molecular layers in thickness) and to characterize the role of film crystallinity, defects and substrate properties in controlling the relevant film quality and stability in the hybrid organic-inorganic junctions;
  2. To investigate carrier transport and other exceptional properties of the films for seeking their potential applications in organic electronics.

The Scanning Probe Microscopy lab (MacN-023)

  • A. Tersigni, and X. R. Qin , Coverage-dependent crystalline domain structures of a tetracene thin film on H/Si(001), J. Vac. Sci. Technol. A 37, 051506 (2019).
  • A. Tersigni, J. T. Sadowski, and X. R. Qin , Visualization of molecular packing and tilting domains and interface effects in tetracene thin films on H/Si(001), Phys. Status Solidi B, 254, 1600777 (2017) (9 pages). The cover page. 
  • J. Shi, D. T. Jiang, J. R. Dutcher, and X. R. Qin , Thickness-dependent mobility in tetracene thin-film field-effect-transistors, J. Vac. Sci. Technol. B 33, 050604 (2015).pdf Times cited: 7 
  • A. Tersigni, X. R. Qin, C. -Y. Kim, R. A. Gordon and D. T. Jiang, Reciprocal-space mapping of lateral single-crystal domains with GIXD for tetracene on H/Si(001), Phys. Rev. B 84, 035303 (2011). Times cited: 7
  • J. Shi and X. R. Qin, Nucleation and growth of tetracene films on silicon oxide, Phys. Rev. B 78, 115412 (2008) (6 pages). Times cited: 25
  • X. R. Qin, A. Tersigni, J. Shi, and D. T. Jiang, Structure and morphology of tetracene thin films on H/Si(001), MRS F06 meeting Symposium S Proceedings (2007).
  • A. Tersigni, J. Shi, D. T. Jiang and X. R. Qin, Structure of tetracene films on hydrogen-passivated Si(001) studied via STM, AFM, and NEXAFS, Phys. Rev. B 74, 205326 (2006) (9 pages). Times cited: 44
  • J. Shi and X. R. Qin, Flux dependence of the morphology of a tetracene film on hydrogen-passivated Si(100), Phys. Rev. B (Rapid Communication) 73, 121303 (2006). Times cited: 22
  • J. Shi and X. R. Qin, Formation of glass fiber tips for scanning near-field optical microscopy by sealed- and open-tube etching, Rev. Sci. Instrum. 76, 013702 (2005) (5 pages).Times cited: 11
  • Z. Y. Lu, F. Liu, C. Z. Wang, X. R. Qin, B. S. Swartzentruber, M. G. Lagally and K. M. Ho, Unique dynamic appearance of a Ge-Si ad-dimer on Si(001), Phys. Rev. Lett. 85, 5603-5606 (2000).Times cited: 37
  • X. R. Qin, B. S. Swartzentruber and M. G. Lagally, Diffusional kinetics of SiGe dimers on Si(100) using atom-tracking scanning tunneling microscopy, Phys. Rev. Lett. 85, 3660-3663 (2000).Times cited: 78
  • X. R. Qin, B. S. Swartzentruber and M. G. Lagally, Scanning tunneling microscopy identification of atomic-scale intermixing on Si(100)-2x1 at submonolayer Ge coverages, Phys. Rev. Lett. 84, 4546-4549 (2000).Times cited: 68
  • S. Liu, C. S. Jayanthi, S. Y. Wu, X. R. Qin, Z. Zhang and M. G. Lagally, Formation of chain and V-shaped structures in the initial stage growth of Si/Si(100), Phys. Rev. B. 61, 4421-4424 (2000). Times cited: 12
  • X. R. Qin and M. G. Lagally,  View of the empty states of the Si(100)-2x1 surface via scanning tunneling microscopy imaging at very low biases, Phys. Rev. B 59, 7293-7296 (1999).Times cited: 52
  • X. R. Qin, F. Liu, B. S. Swartzentruber and M. G. Lagally, Modification of Si(100) substrate bonding by adsorbed Ge or Si dimer islands, Phys. Rev. Lett. 81, 2288-2291 (1998).Times cited: 26
  • X. R. Qin, Z. H. Lu, J. G. Shapter, L. L. Coatsworth, K. Griffiths and P. R. Norton, Surface morphology of ex-situ sulphur-passivated (1x1) and (2x1) InP(100) surfaces, J. Vac. Sci. Technol. A 16, 163-168 (1998).Times cited: 15
  • X. R. Qin and M. G. Lagally,   Adatom Pairing Structures for Ge on Si(100): The Initial Stage of Island Formation, Science 278, 1444-1447 (1997).Times cited: 66
  • X. R. Qin and P. R. Norton, Scanning tunneling microscopy of the phase transition between H/Si(100)-(2x1) and H/Si(100)-(3x1), Phys. Rev. B 53, 11100-11107 (1996).Times cited: 42
  • G. W. Anderson, M. C. Hanf, X. R. Qin, P. R. Norton, K. Myrtle and B. Heinrich, Epitaxial growth of Fe on sulfur-passivated GaAs(100): a method for preventing As interdiffusion, Surf. Sci. 346, 145(1996). Times cited: 27
  • X. R. Qin, D. Yang, R. F. Frindt and J. C. Irwin, Scanning tunneling microscopy of single-layer MoS2 in water and butanol, Ultramicroscopy 42-44, 630-636 (1992). Times cited: 32
  • X. R. Qin, D. Yang, R. F. Frindt and J. C. Irwin, Real-space imaging of single layer MoS2 by scanning tunneling microscopy, Phys. Rev. B (Rapid Communication) 44, 3490-3493 (1991).Times cited: 66
  • X. R. Qin and G. Kirczenow, Theory of scanning tunnelling microscopy images of intercalated graphite surfaces, Phys. Rev. B 41, 4976-4985 (1990).Times cited: 10
  • X. R. Qin and G. Kirczenow, Scanning tunneling microscopy and structural properties of intercalated graphite surfaces, Phys. Rev. B (Rapid Communication) 39, 6245-6248 (1989). Times cited: 19

Alumni

Graduate Students

Daniel Cuthbert, MSc
Andrew Tersigni --- (M.Sc. & Ph.D.) 
Jun Shi --- (M.Sc. & Ph.D.)

Undergraduate students


A. Murphy 
E. Fernandes 
B. Knight 
H. Bidaman 
T. Zielinski 
S. Charpentier 
L. Rogers 
A. Galea 
D. Konstantinou 
J. Malcolm 
D. Marcy 
T. Sheffield 
J. Rock 
M. Bird 
R. Martin 
S. A. Graham 
P. Hook